FORMATION OF INP METAL-INSULATOR-SEMICONDUCTOR SCHOTTKY JUNCTIONS BY UV LASER-INDUCED PHOTOLYTIC PROCESS OF PHOSPHINE GAS

被引：7

作者：

SUGINO, T

ITO, H

SHIRAFUJI, J

机构：

[1] Department of Electrical Engineering, Osaka University, Osaka, 565, 2-1 Yamadaoka, Suita

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 10期

关键词：

Barrier height; Excimer laser; Hydrogenation; InP; IVIIS Schottky junction; Photolytic process;

D O I：

10.1143/JJAP.29.L1771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown by Auger electron spectroscopy analysis that the ArF excimer laser photolytic process of phosphine (PH3) gas is capable of removing native oxide and simultaneously depositing amorphous P film on an InP surface. The barrier height of Au-InP Schottky junctions with a thin P layer is found to increase to 0.73 eV from 0.48 eV in the case of untreated Schottky diodes. An enhancement of the barrier height is attributed to a metal-insulator-semiconductor (MIS) Schottky structure. In addition, it is demonstrated that the present procedure is suitable for hydrogenation of InP surfaces without surface degradation due to P dissociation. © 1990 IOP Publishing Ltd.

引用

页码：L1771 / L1774

页数：4

共 24 条

[1] EFFECT OF PHOTOCHEMICAL ETCHING ON INTERFACE STATE DENSITY OF GA0.47IN0.53AS METAL-INSULATOR SEMICONDUCTOR DIODES [J].