EFFECT OF PHOTOCHEMICAL ETCHING ON INTERFACE STATE DENSITY OF GA0.47IN0.53AS METAL-INSULATOR SEMICONDUCTOR DIODES

被引：4

作者：

AOKI, A

MIYOSHI, S

SHIRAFUJI, J

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 17期

关键词：

D O I：

10.1049/el:19870630

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：891 / 892

页数：2

共 11 条

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[3] CHARACTERISTICS OF THE LOW-TEMPERATURE-DEPOSITED SIO2-GA0.47IN0.53AS METAL-INSULATOR SEMICONDUCTOR INTERFACE [J].

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[4]

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[5]

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[8] CHARACTERISTICS OF ANODIC NATIVE OXIDE MIS DIODES OF IN0.53GA0.47AS [J].

SHIRAFUJI, J ;

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[9] NATIVE GROWN PLASMA OXIDES AND INVERSION-LAYERS ON INGAAS [J].

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[10] AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES [J].

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