CHARACTERISTICS OF ANODIC NATIVE OXIDE MIS DIODES OF IN0.53GA0.47AS

被引：4

作者：

SHIRAFUJI, J

AMANO, M

INOUE, M

INUISHI, Y

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 15期

关键词：

D O I：

10.1049/el:19820445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：653 / 654

页数：2

共 9 条

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[8] INVERSION-MODE INSULATED GATE GA0.47IN0.53AS FIELD-EFFECT TRANSISTORS [J].

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ELECTRON DEVICE LETTERS, 1981, 2 (03) :73-74

[9] AUGER ANALYSIS OF ANODIC OXIDE INP INTERFACE [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :953-956

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