ELECTRICAL CHARACTERISTICS AND RELIABILITY OF PT/TI/PT/AU OHMIC CONTACTS TO P-TYPE GAAS

被引：37

作者：

OKADA, H

SHIKATA, S

HAYASHI, H

机构：

[1] Optoelectronics Laboratories, Sumitomo Electric Industries Ltd., Sakae-ku, Yokohama, 244

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 4A期

关键词：

OHMIC CONTACT; GAAS; HETEROJUNCTION BIPOLAR TRANSISTOR; PT; RELIABILITY;

D O I：

10.1143/JJAP.30.L558

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ohmic contacts to p-type GaAs formed by GaAs/Pt/Ti/Pt/Au systems were investigated. The specific contact resistance below 8 x 10(-7) OMEGA.cm2 was achieved when the interface Pt between GaAs and Ti/Pt/Au was thicker than 50 angstrom, which is about one-fourth of the conventional Ti/Pt/Au contact. The activation energies of the initial degradation of the Pt/Ti/Pt/Au electrodes correspond to the reaction of GaAs and Pt to form PtAs2. However, even after the initial degradation, Pt/Ti/Pt/Au with the thin Pt interface layer still shows lower contact resistivity. These systems are promising for practical p-type ohmic contacts for AlGaAs/GaAs heterojunction bipolar transistors.

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页码：L558 / L560

页数：3

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