UV PHOTOEMISSION-STUDY OF THE SYSTEM CU ON SI(100)2X1

被引：7

作者：

RADLIK, W ^{[1
]}

NEDDERMEYER, H ^{[1
]}

机构：

[1] RUHR UNIV BOCHUM,INST EXPTL PHYS,D-4630 BOCHUM,FED REP GER

来源：

SURFACE SCIENCE | 1988年 / 195卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(88)90791-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：195 / 206

页数：12

共 22 条

[1] PHOTOEMISSION INVESTIGATION OF SI(111)-CU INTERFACES [J].

ABBATI, I ;

GRIONI, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :631-635

[2]

BATTYE FL, 1977, Z PHYS B, V17, P209

[3]

BRAUN W, 1983, ANN ISRAELI PHYS SOC, V6, P30

[4] ATOMIC BONDING AT THE SI-AU AND SI-CU INTERFACES [J].

DALLAPORTA, H ;

CROS, A .

SURFACE SCIENCE, 1986, 178 (1-3) :64-69

[5] 7X7 SI(111)-CU INTERFACES - COMBINED LEED, AES AND EELS MEASUREMENTS [J].

DAUGY, E ;

MATHIEZ, P ;

SALVAN, F ;

LAYET, JM .

SURFACE SCIENCE, 1985, 154 (01) :267-283

[6] FORMATION OF NOBLE-METAL SI(100) INTERFACES [J].

HANBUCKEN, M ;

LELAY, G .

SURFACE SCIENCE, 1986, 168 (1-3) :122-132

[7] COMBINED AES, LEED, SEM AND TEM CHARACTERIZATIONS OF CU-SI(100) INTERFACES [J].

HANBUCKEN, M ;

METOIS, JJ ;

MATHIEZ, P ;

SALVAN, F .

SURFACE SCIENCE, 1985, 162 (1-3) :622-627

[8]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[9] CHEMICAL BONDING AND ELECTRONIC-STRUCTURE OF PD2SI [J].

HO, PS ;

RUBLOFF, GW ;

LEWIS, JE ;

MORUZZI, VL ;

WILLIAMS, AR .

PHYSICAL REVIEW B, 1980, 22 (10) :4784-4790

[10]

KEMMANN H, IN PRESS SURFACE SCI

← 1 2 3 →