COMBINED AES, LEED, SEM AND TEM CHARACTERIZATIONS OF CU-SI(100) INTERFACES

被引：29

作者：

HANBUCKEN, M

METOIS, JJ

MATHIEZ, P

SALVAN, F

机构：

[1] UNIV AIX MARSEILLE 1,UER PHYS,F-13331 MARSEILLE 3,FRANCE

[2] FAC SCI LUMINY,DEPT PHYS,CNRS,UA 783,CASE 901,F-13288 MARSEILLE 9,FRANCE

来源：

关键词：

D O I：

10.1016/0039-6028(85)90957-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：622 / 627

页数：6

共 13 条

[1] PHOTOEMISSION INVESTIGATION OF SI(111)-CU INTERFACES
ABBATI, I
GRIONI, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 631 - 635
[2] CHARACTERIZATION OF INTERMIXING AT METAL-SEMICONDUCTOR INTERFACES BY ANGLE-RESOLVED AUGER-ELECTRON EMISSION - CU/SI(111)-7X7
CHAMBERS, SA
HOWELL, GA
GREENLEE, TR
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1985, 31 (10): : 6402 - 6410
[3] CHARACTERISTIC ENERGIES IN SECONDARY ELECTRON SPECTRA FROM SI(111) SURFACES
CHUNG, MF
JENKINS, LH
[J]. SURFACE SCIENCE, 1971, 26 (02) : 649 - &
[4] 7X7 SI(111)-CU INTERFACES - COMBINED LEED, AES AND EELS MEASUREMENTS
DAUGY, E
MATHIEZ, P
SALVAN, F
LAYET, JM
[J]. SURFACE SCIENCE, 1985, 154 (01) : 267 - 283
[5] GRANT JT, 1970, SURF SCI, V19, P347
[6] HANBUCKEN M, UNPUB
[7] SIMILARITIES IN CHEMICAL INTERMIXING AT THE CU/INP AND CU/SI INTERFACES
KENDELEWICZ, T
ROSSI, G
PETRO, WG
BABALOLA, IA
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 564 - 569
[8] PHYSICS AND ELECTRONICS OF THE NOBLE-METAL ELEMENTAL-SEMICONDUCTOR INTERFACE FORMATION - A STATUS-REPORT
LELAY, G
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 169 - 204
[9] LEPETRE Y, UNPUB J OPT SOC AM
[10] FORMATION AND PROPERTIES OF THE COPPER SILICON (111) INTERFACE
RINGEISEN, F
DERRIEN, J
DAUGY, E
LAYET, JM
MATHIEZ, P
SALVAN, F
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 546 - 552