共 15 条
- [1] EXPLOITING ENERGY-DEPENDENT PHOTOEMISSION IN SI D-METAL INTERFACES - THE SI(111)-PD CASE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 636 - 640
- [2] [Anonymous], 1978, HDB XRAY PHOTOELECTR
- [3] ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 661 - 666
- [4] FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 564 - 569
- [5] BRILLSON LJ, 1982, SURFACE SCI REPT, V2, P124
- [6] Cho Y. S., UNPUB
- [7] HIRAKI A, 1980, J ELECTROCHEM SOC, V127, P2267
- [8] HO P, 1980, PHYS REV B, V22, P4748
- [10] CHEMISORPTION AND OXIDATION STUDIES OF (110) SURFACES OF GAAS, GASB, AND INP [J]. PHYSICAL REVIEW B, 1978, 18 (06): : 2792 - 2806