RADIATION-INDUCED CARBON-RELATED DEFECTS IN P-TYPE SILICON

被引：12

作者：

FREDERICKSON, AR

KARAKASHIAN, AS

DREVINSKY, PJ

CAEFER, CE

机构：

[1] UNIV LOWELL,DEPT PHYS & APPL PHYS,LOWELL,MA 01854

[2] USAF,ROME AIR DEV CTR,SOLID STATE SCI DIRECTORATE,BEDFORD,MA 01731

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 08期

关键词：

D O I：

10.1063/1.343411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3272 / 3274

页数：3

共 21 条

[1] INTERSTITIAL DEFECT REACTIONS IN SILICON [J].

ASOM, MT ;

BENTON, JL ;

SAUER, R ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1987, 51 (04) :256-258

[2] CONFIGURATIONALLY MULTISTABLE DEFECT IN SILICON [J].

CHANTRE, A ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1986, 48 (15) :1000-1002

[3]

Chantre A., 1986, Materials Science Forum, V10-12, P1111, DOI 10.4028/www.scientific.net/MSF.10-12.1111

[4] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J].

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW, 1965, 138 (2A) :A555-&

[5]

CORELLI JC, 1966, IEEE T NUCL SCI, VNS13, P70

[6] C-INDUCED DEEP LEVELS IN CRYSTALLINE SI [J].

ENDROS, A ;

KRUHLER, W ;

KOCH, F .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) :5051-5054

[7] CORRELATION OF THE CONCENTRATION OF THE CARBON-ASSOCIATED RADIATION-DAMAGE LEVELS WITH THE TOTAL CARBON CONCENTRATION IN SILICON [J].

FERENCZI, G ;

LONDOS, CA ;

PAVELKA, T ;

SOMOGYI, M ;

MERTENS, A .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (01) :183-189

[8] DISPLACEMENT DAMAGE AND DOSE ENHANCEMENT IN GALLIUM-ARSENIDE AND SILICON [J].

GARTH, JC ;

BURKE, EA ;

WOOLF, S .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4382-4387

[9]

Kimerling L. C., 1977, International Conference on Radiation Effects in Semiconductors, P221

[10]

LARIN F, 1968, RAD EFFECTS SEMICOND, P15

← 1 2 3 →