DOPING EFFECTS OF GROUP-III AND GROUP-V ELEMENT ON A-SI PREPARED BY HIGH-PRESSURE RF SPUTTERING

被引：10

作者：

SUZUKI, M

NAKAO, A

MAEKAWA, T

KUMEDA, M

SHIMIZU, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S2.85

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：85 / 89

页数：5

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共 13 条

[1] BRATTAIN WH, 1953, AT&T TECH J, V32, P1
[2] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE
BRODSKY, MH
TITLE, RS
[J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &
[3] SOLAR-CELLS USING DISCHARGE-PRODUCED AMORPHOUS SILICON
CARLSON, DE
WRONSKI, CR
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 95 - 106
[4] AMORPHOUS SILICON SOLAR-CELL
CARLSON, DE
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (11) : 671 - 673
[5] ELECTRICAL-PROPERTIES OF OXYGENATED AMORPHOUS-SI PREPARED BY ION-BEAM SPUTTERING
ISHII, K
NAOE, M
YAMANAKA, S
OKANO, S
SUZUKI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (07) : 1395 - 1396
[6] KNOTEK ML, 1973, PHYS REV LETT, V30, P856
[7] NEW DEVELOPMENT IN STUDY OF AMORPHOUS SILICON HYDROGEN ALLOYS - STORY OF O
PAESLER, MA
ANDERSON, DA
FREEMAN, EC
MODDEL, G
PAUL, W
[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (21) : 1492 - 1495
[8] PAULEWICZ WT, 1978, J APPL PHYSICS, V49, P5595
[9] INFLUENCE OF OXYGEN AND DEPOSITION CONDITIONS ON RF-SPUTTERED AMORPHOUS SI FILMS
SHIMIZU, T
KUMEDA, M
WATANABE, I
KAMONO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (10) : 1923 - 1929
[10] SHIMIZU T, 1979, 8TH P INT C AM LIQ S