SUBSTANTIATION OF SUBPLANTATION MODEL FOR DIAMOND-LIKE FILM GROWTH BY ATOMIC-FORCE MICROSCOPY

Atomic force microscopy studies of films deposited from C+ ions are reported. For C+ energies E greater-than-or-equal-to 30 eV the films are diamondlike and retain the initial smoothness of the silicon substrate. For E < 30 eV graphitic films evolve with the surface roughness increasing with decreasing C+ energy. It was further found that for 120 eV C+ deposition, at substrate temperatures T(s) < 150-degrees-C diamondlike, smooth films are deposited, while for T(s) > 150-degrees-C graphitic, rough films are produced. The results substantiate the subplantation model, manifesting the role of subsurface internal growth in diamondlike film formation.