CONTROL OF POROUS SILICON LUMINESCENT PATTERN-FORMATION BY ION-IMPLANTATION

被引：33

作者：

BAO, XM ^{[1
]}

YANG, HQ ^{[1
]}

机构：

[1] NANJING UNIV,SOLID STATE MICROSTRUCT LAB,NANJING,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 16期

关键词：

D O I：

10.1063/1.110541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a method to generate luminescent patterns of porous silicon. The crystal Si samples were selectively amorphized by self-implantation through a deposited Al mask. After anodization, the porous Si formed on the crystal regions exhibits visible luminescence, while that on the preamorphized regions does not. The limit of resolution of the light-emitting patterns is about 2 mum.

引用

页码：2246 / 2247

页数：2

共 6 条

[1] BAO X, 1993, J SEMICOND, V14, P322
[2] ION-IRRADIATION CONTROL OF PHOTOLUMINESCENCE FROM POROUS SILICON
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[4] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON
CULLIS, AG
CANHAM, LT
[J]. NATURE, 1991, 353 (6342) : 335 - 338
[5] PHOTOLITHOGRAPHIC FABRICATION OF MICRON-DIMENSION POROUS SI STRUCTURES EXHIBITING VISIBLE LUMINESCENCE
DOAN, VV
SAILOR, MJ
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (05) : 619 - 620
[6] DOPING-INDUCED SELECTIVE AREA PHOTOLUMINESCENCE IN POROUS SILICON
STECKL, AJ
XU, J
MOGUL, HC
MOGREN, S
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (16) : 1982 - 1984

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