EFFECT OF SURFACE PREPARATIONS ON ELECTRICAL AND CHEMICAL SURFACE-PROPERTIES OF P-TYPE SILICON

被引：25

作者：

DEMIERRY, P ^{[1
]}

BALLUTAUD, D ^{[1
]}

AUCOUTURIER, M ^{[1
]}

ETCHEBERRY, A ^{[1
]}

机构：

[1] CNRS,ELECTROCHIM LAB,F-92195 MEUDON,FRANCE

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 09期

关键词：

D O I：

10.1149/1.2087108

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effects of chemical etching and mechanochemical polishing on p-type silicon have been studied using capacitance measurements. The flatband potential VFB, as determined from Mott-Schottky plots, was found to be unrealistically large and very sensitive to the surface preparations used. The positive shifts of VFBare explained in terms of a compensating effect from the silicon bulk. This compensating effect is partially suppressed by annealing. Elemental analysis of the surface using secondary ion mass spectroscopy and x-ray photoelectron spectroscopy indicates that the most likely cause of the compensating effect is hydrogen. The source of hydrogen is the aqueous media used in the surface treatment processes. copyright. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：2966 / 2973

页数：8

共 24 条

[1]

AUCOUTURIER M, 1989, OCT ECASIA 89 ANT

[2] DEEP LEVELS OF COPPER IN SILICON [J].