IN-DEPTH PROFILING OF SPUTTER-INDUCED SPACE-CHARGE COMPENSATION IN P-SILICON SCHOTTKY BARRIERS

被引：25

作者：

HELLINGS, GJA

STRAAYER, A

KIPPERMAN, AHM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 06期

关键词：

D O I：

10.1063/1.334398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2067 / 2071

页数：5

共 25 条

[1] ELECTRICAL CHARACTERISTICS OF SPUTTERING-INDUCED DEFECTS IN TYPE-N SILICON [J].

ANDERSSON, LP ;

EVWARAYE, AO .

VACUUM, 1978, 28 (01) :5-7

[2] SUBSTRATE SURFACE DAMAGES BY RF-SPUTTERING [J].

BERG, S ;

ANDERSSON, LP ;

NORSTROM, H ;

GRUSELL, E .

VACUUM, 1977, 27 (03) :189-191

[3] ANODIC-OXIDATION OF SILICON IN ORGANIC BATHS CONTAINING FLUORINE [J].

CROSET, M ;

DIEUMEGA.D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) :526-532

[4]

DUFFEK EF, 1965, ELECTROCHEM TECHNOL, V3, P75

[5] EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON [J].

FONASH, SJ ;

ASHOK, S ;

SINGH, R .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :423-425

[6] FULLY-AUTOMATIC APPARATUS FOR THE DETERMINATION OF DOPING PROFILES IN SI BY ELECTRICAL MEASUREMENTS AND ANODIC-STRIPPING [J].

GALLONI, R ;

SARDO, A .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1983, 54 (03) :369-373

[7] THE PROPERTIES OF IRON IN SILICON [J].

GRAFF, K ;

PIEPER, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :669-674

[8] ELECTRICAL DEFECTS IN SILICON INTRODUCED BY SPUTTERING AND SPUTTER-ETCHING [J].

GRUSELL, E ;

BERG, S ;

ANDERSSON, LP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1573-1576

[9]

HELLINGS GJA, 1982, THESIS EINDHOVEN U T

[10]

Hu S. M., 1973, ATOMIC DIFFUSION SEM, P217

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