ELECTRICAL DEFECTS IN SILICON INTRODUCED BY SPUTTERING AND SPUTTER-ETCHING

被引：60

作者：

GRUSELL, E

BERG, S

ANDERSSON, LP

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 07期

关键词：

D O I：

10.1149/1.2129953

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：1573 / 1576

页数：4

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