BARRIER FORMATION BY GLOW-DISCHARGE INDUCED CENTERS ON SILICON SURFACES

被引：5

作者：

NORSTROM, H

GRUSELL, E

ANDERSSON, LP

BERG, S

机构：

来源：

PHYSICA SCRIPTA | 1978年 / 18卷 / 06期

关键词：

D O I：

10.1088/0031-8949/18/6/017

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：421 / 423

页数：3

相关论文

共 8 条

[1] ELECTRICAL CHARACTERISTICS OF SPUTTERING-INDUCED DEFECTS IN TYPE-N SILICON
ANDERSSON, LP
EVWARAYE, AO
[J]. VACUUM, 1978, 28 (01) : 5 - 7
[2] MECHANISM OF ALUMINUM CONTACTS IN SURFACE BARRIER DETECTORS
ANDERSSON, LP
BERG, S
[J]. NUCLEAR INSTRUMENTS & METHODS, 1973, 108 (03): : 435 - 437
[3] SUBSTRATE SURFACE DAMAGES BY RF-SPUTTERING
BERG, S
ANDERSSON, LP
NORSTROM, H
GRUSELL, E
[J]. VACUUM, 1977, 27 (03) : 189 - 191
[4] EFFECTS OF SPUTTERING DAMAGE ON CHARACTERISTICS OF MOLYBDENUM-SILICON SCHOTTKY-BARRIER DIODES
MULLINS, FH
BRUNNSCHWEILER, A
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (01) : 47 - 50
[5] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS
PADOVANI, FA
STRATTON, R
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 695 - &
[6] REDUCING EFFECTIVE HEIGHT OF A SCHOTTKY-BARRIER USING LOW-ENERGY ION-IMPLANTATION
SHANNON, JM
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (08) : 369 - 371
[7] INCREASING EFFECTIVE HEIGHT OF A SCHOTTKY-BARRIER USING LOW-ENERGY ION-IMPLANTATION
SHANNON, JM
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (01) : 75 - 77
[8] TOVE PA, 1970, SEP P IEEE C EL DEV, V67