INAS P-N DIODES GROWN ON GAAS AND GAAS-COATED SI BY MOLECULAR-BEAM EPITAXY

被引:27
作者
DOBBELAERE, W [1 ]
DEBOECK, J [1 ]
HEREMANS, P [1 ]
MERTENS, R [1 ]
BORGHS, G [1 ]
LUYTEN, W [1 ]
VANLANDUYT, J [1 ]
机构
[1] UNIV ANTWERP,RUCA,B-2020 ANTWERP,BELGIUM
关键词
D O I
10.1063/1.106490
中图分类号
O59 [应用物理学];
学科分类号
摘要
InAs p-n diodes have been grown on GaAs and GaAs-coated Si substrates by molecular beam epitaxy. Transmission electron microscopy cross sections of the epilayers demonstrate a good structural quality. Photodiodes were obtained using a Be (p = 5 x 10(16) cm-3) and Si (n = 3 x 10(16) cm-3) doping scheme. The diodes exhibited 77 K zero-bias resistance area products of 2200 OMEGA cm2 for InAs/GaAs and 1500 OMEGA cm2 for InAs/GaAs/Si. The spectral response of the devices peaked at 2.95-mu-m with Johnson noise limited detectivities D* of 7.0 x 10(11) cm Hz1/2/W for InAs/GaAs and 5.8 x 10(11) cm Hz1/2/W for InAs/GaAs/Si. These results clearly demonstrate the feasibility of the monolithic integration of InAs infrared detectors and GaAs or Si read-out electronics.
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页码:868 / 870
页数:3
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