INAS P-N DIODES GROWN ON GAAS AND GAAS-COATED SI BY MOLECULAR-BEAM EPITAXY

被引：27

作者：

DOBBELAERE, W ^{[1
]}

DEBOECK, J ^{[1
]}

HEREMANS, P ^{[1
]}

MERTENS, R ^{[1
]}

BORGHS, G ^{[1
]}

LUYTEN, W ^{[1
]}

VANLANDUYT, J ^{[1
]}

机构：

[1] UNIV ANTWERP,RUCA,B-2020 ANTWERP,BELGIUM

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.106490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs p-n diodes have been grown on GaAs and GaAs-coated Si substrates by molecular beam epitaxy. Transmission electron microscopy cross sections of the epilayers demonstrate a good structural quality. Photodiodes were obtained using a Be (p = 5 x 10(16) cm-3) and Si (n = 3 x 10(16) cm-3) doping scheme. The diodes exhibited 77 K zero-bias resistance area products of 2200 OMEGA cm2 for InAs/GaAs and 1500 OMEGA cm2 for InAs/GaAs/Si. The spectral response of the devices peaked at 2.95-mu-m with Johnson noise limited detectivities D* of 7.0 x 10(11) cm Hz1/2/W for InAs/GaAs and 5.8 x 10(11) cm Hz1/2/W for InAs/GaAs/Si. These results clearly demonstrate the feasibility of the monolithic integration of InAs infrared detectors and GaAs or Si read-out electronics.

引用

页码：868 / 870

页数：3

共 20 条

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