MOLECULAR-BEAM EPITAXY GROWTH OF INSB FILMS ON GAAS

被引：37

作者：

DAVIS, JL

THOMPSON, PE

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 22期

关键词：

D O I：

10.1063/1.101134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2235 / 2237

页数：3

共 25 条

[1] MOLECULAR-BEAM EPITAXY OF INSB (110) [J].

BOSCH, AJ ;

VANWELZENIS, RG ;

SCHANNEN, OFZ .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) :3434-3439

[2] PREPARATION OF HIGH MOBILITY INSB THIN FILMS [J].

CARROLL, JA ;

SPIVAK, JF .

SOLID-STATE ELECTRONICS, 1966, 9 (05) :383-&

[3]

CHAING PK, 1985, APPL PHYS LETT, V46, P383

[4] RAMAN-SCATTERING IN INAS1-XSBX GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

CHERNG, YT ;

MA, KY ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1988, 53 (10) :886-887

[5] GROWTH OF INSB AND INAS1-XSBX ON GAAS BY MOLECULAR-BEAM EPITAXY [J].

CHYI, JI ;

KALEM, S ;

KUMAR, NS ;

LITTON, CW ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1988, 53 (12) :1092-1094

[6] BULK-LIKE INSB FILMS BY HOT-WIRE ZONE CRYSTALLIZATION [J].

CLAWSON, AR .

THIN SOLID FILMS, 1972, 12 (02) :291-&

[7] EFFECTS OF DISLOCATIONS ON MOBILITIES IN SEMICONDUCTORS [J].

DEXTER, DL ;

SEITZ, F .

PHYSICAL REVIEW, 1952, 86 (06) :964-965

[8]

KIMTA M, 1987, J CRYST GROWTH, V81, P508

[9]

KITTEL C, 1976, INTRO SOLID STATE PH, P229

[10] EXTENDED INFRARED RESPONSE OF INASSB STRAINED-LAYER SUPERLATTICES [J].

KURTZ, SR ;

OSBOURN, GC ;

BIEFELD, RM ;

DAWSON, LR ;

STEIN, HJ .

APPLIED PHYSICS LETTERS, 1988, 52 (10) :831-833

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