GROWTH OF INSB AND INAS1-XSBX ON GAAS BY MOLECULAR-BEAM EPITAXY

被引：104

作者：

CHYI, JI ^{[1
]}

KALEM, S ^{[1
]}

KUMAR, NS ^{[1
]}

LITTON, CW ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.100031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1092 / 1094

页数：3

共 14 条

[1] THE PREPARATION OF INAS1-XSBX ALLOYS AND STRAINED-LAYER SUPERLATTICES BY MOCVD
BIEFELD, RM
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 392 - 399
[2] BACKSIDE-ILLUMINATED INASSB-GASB BROAD-BAND DETECTORS
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ANDREWS, AM
GERTNER, ER
CHEUNG, DT
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 734 - 736
[3] GROWTH OF INSB AND INAS1-XSBX BY OM-CVD
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BEDAIR, SM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2422 - 2426
[4] CHYI JI, UNPUB
[5] SUMMARY ABSTRACT - MOLECULAR-BEAM EPITAXIAL-GROWTH OF INASSB ALLOYS AND SUPERLATTICES
DAWSON, LR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 598 - 599
[6] EFFECTS OF DISLOCATIONS ON MOBILITIES IN SEMICONDUCTORS
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[J]. PHYSICAL REVIEW, 1952, 86 (06): : 964 - 965
[7] GROWTH OF INAS1-XSBX(0 LESS-THAN X LESS-THAN 1) AND INSB-INASSB SUPERLATTICES BY MOLECULAR-BEAM EPITAXY
LEE, GS
LO, Y
LIN, YF
BEDAIR, SM
LAIDIG, WD
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1219 - 1221
[8] HIGH-DETECTIVITY INAS0.85SB0.15/INAS INFRARED (1.8-4.8 MU-M) DETECTORS
MOHAMMED, K
CAPASSO, F
LOGAN, RA
VANDERZIEL, JP
HUTCHINSON, AL
[J]. ELECTRONICS LETTERS, 1986, 22 (04) : 215 - 216
[9] PROPERTIES OF MBE GROWN INSB AND INSB1-XBIX
NOREIKA, AJ
GREGGI, J
TAKEI, WJ
FRANCOMBE, MH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 558 - 561
[10] INASSB STRAINED-LAYER SUPERLATTICES FOR LONG WAVELENGTH DETECTOR APPLICATIONS
OSBOURN, GC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 176 - 178

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