MOLECULAR-BEAM EPITAXY GROWTH OF INSB FILMS ON GAAS

被引：37

作者：

DAVIS, JL

THOMPSON, PE

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 22期

关键词：

D O I：

10.1063/1.101134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2235 / 2237

页数：3

共 25 条

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[20] MOLECULAR-BEAM EPITAXY OF (100)INSB FOR CDTE INSB DEVICE APPLICATIONS [J].

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