THE PREPARATION OF EPITAXIAL INSB FILMS BY MAGNETRON SPUTTERING

InSb demonstrates an extremely high electron mobility, up to 1 000 000 cm**2 multiplied by (times) V** minus **1 multiplied by (times) s** minus **1 at 77 K, which makes it of particular interest for very high-speed circuit applications. The preparation of thin epitaxial films of InSb by magnetron sputtering is discussed. Using this technique, we have deposited good quality epitaxial InSb films on LT AN BR 100 RT AN BR InSb and LT AN BR 100 RT AN BR GaAs. The effects of substrate temperature and sputter pressure on film morphology, composition, and growth rate are examined. Preliminary measurement of the electrical characteristics of these layers and their crystal quality by X-ray diffraction and large-area electron-channelling pattern analysis are presented.