A GAAS AVALANCHE DIODE ANALYSIS AND AN APPROXIMATE INDIRECT MEASUREMENT OF HOLE SATURATION VELOCITY

被引：8

作者：

KIM, CK

机构：

[1] Micro State Electronics Operation Ray theon Co., Murray Hill, N.J

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 11期

关键词：

D O I：

10.1109/T-ED.1969.16881

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs avalanche diodes are observed to operate at frequencies considerably lower than those of Si or Ge diodes with similar doping profiles and dc characteristics. This observed behavior and the analysis shown in this paper enable us to evaluate an approximate hole saturation velocity in GaAs. Small signal impedances and Q's of GaAs avalanche diodes with breakdown voltages of 17, 36, and 58 are calculated based on the approximated hole saturation velocity of 2×108crn/s. The model assumes an abrupt p+ -n junction, e.g., zinc diffusion on n-type material, and a realistic electric field in the space-charge region. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：917 / +

页数：1

共 8 条

[1] AVALANCHE REGION OF IMPATT DIODES [J].