VARIATION IN SEU SENSITIVITY OF DOSE-IMPRINTED CMOS SRAMS

被引：33

作者：

STASSINOPOULOS, EG

BRUCKER, GJ

VANGUNTEN, O

KIM, HS

机构：

[1] GE,DIV ASTROSPACE,PRINCETON,NJ

[2] LAB PHYS SCI,COLLEGE PK,MD

[3] SCI SYST & APPLICAT INC,SEABROOK,MD

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45444

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2330 / 2338

页数：9

共 16 条

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[4]

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[7]

FLEETWOOD DM, 1987, IEEE T NUCL SCI, V34

[8] HEAVY ION-INDUCED SINGLE EVENT UPSETS OF MICROCIRCUITS - A SUMMARY OF THE AEROSPACE CORPORATION TEST DATA [J].

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[9] THE SIZE EFFECT OF ION CHARGE TRACKS ON SINGLE EVENT MULTIPLE-BIT UPSET [J].

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1305-1309

[10]

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