QUANTIFICATION OF THE MEMORY IMPRINT EFFECT FOR A CHARGED-PARTICLE ENVIRONMENT

被引：19

作者：

BHUVA, BL ^{[1
]}

JOHNSON, RL ^{[1
]}

GYURCSIK, RS ^{[1
]}

FERNALD, KW ^{[1
]}

KERNS, SE ^{[1
]}

STAPOR, WJ ^{[1
]}

CAMPBELL, AB ^{[1
]}

XAPSOS, MA ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1414 / 1418

页数：5

共 17 条

[1]

ARIMURA I, 1984, D180282952 BOEING AE

[2] CHARGE AND INTERFACE STATE GENERATION IN FIELD OXIDES [J].

BOESCH, HE ;

TAYLOR, TL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1273-1279

[3]

BRUCKER GJ, 1986, IEEE T NUCL SCI, V33, P1484

[4]

BRUCKER GJ, 1985, OCT RAD HARD EL TECH

[5] CORRELATED PROTON AND HEAVY-ION UPSET MEASUREMENTS ON IDT STATIC RAMS [J].

CAMPBELL, AB ;

STAPOR, WJ ;

KOGA, R ;

KOLASINSKI, WA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4150-4154

[6] THE TOTAL DOSE DEPENDENCE OF THE SINGLE EVENT UPSET SENSITIVITY OF IDT STATIC RAMS [J].

CAMPBELL, AB ;

STAPOR, WJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1175-1177

[7]

CAMPBELL AB, 1981, NUCL INSTRUM METHODS, V191, P427

[8] THE EFFECTS OF TEST CONDITIONS ON MOS RADIATION-HARDNESS RESULTS [J].

DRESSENDORFER, PV ;

SODEN, JM ;

HARRINGTON, JJ ;

NORDSTROM, TV .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4281-4287

[9] DOSE DEPENDENCE OF SINGLE EVENT UPSET RATE IN MOS DRAMS [J].

KNUDSON, AR ;

CAMPBELL, AB ;

HAMMOND, EC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4508-4513

[10]

MAY TC, 1979, IEEE T ELECTRON DEVI, V26

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