DOSE DEPENDENCE OF SINGLE EVENT UPSET RATE IN MOS DRAMS

被引：9

作者：

KNUDSON, AR

CAMPBELL, AB

HAMMOND, EC

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333162

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4508 / 4513

页数：6

共 17 条

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[7] USE OF AN ION MICROBEAM TO STUDY SINGLE EVENT UPSETS IN MICROCIRCUITS [J].

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[10] SIMULATION OF COSMIC-RAY INDUCED SOFT ERRORS AND LATCHUP IN INTEGRATED-CIRCUIT COMPUTER MEMORIES [J].

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