ON LIGHT-INDUCED EFFECT IN AMORPHOUS HYDROGENATED SILICON

被引：108

作者：

GUHA, S

NARASIMHAN, KL

PIETRUSZKO, SM

机构：

[1] Tata Institute of Fundamental Research, Bombay 400005, India

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.328849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：859 / 860

页数：2

共 14 条

[1] AMORPHOUS SILICON SOLAR-CELL
CARLSON, DE
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (11) : 671 - 673
[2] FRITZSCHE H, COMMUNICATION
[3] DRIFT MOBILITY AND PHOTOCONDUCTIVITY IN AMORPHOUS SILICON
FUHS, W
MILLEVILLE, M
STUKE, J
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02): : 495 - 502
[4] DETERMINATION OF THE DENSITY OF STATES OF A-SI-H USING THE FIELD-EFFECT
GOODMAN, NB
FRITZSCHE, H
OZAKI, H
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 599 - 604
[5] HYDROGEN CONTENT, ELECTRICAL-PROPERTIES AND STABILITY OF GLOW-DISCHARGE AMORPHOUS SILICON
JONES, DI
GIBSON, RA
LECOMBER, PG
SPEAR, WE
[J]. SOLAR ENERGY MATERIALS, 1979, 2 (01): : 93 - 106
[6] LIGHT-INDUCED AGING EFFECTS IN SCHOTTKY DIODES ON SPUTTERED HYDROGENATED AMORPHOUS-SILICON (A-SIH) - INTERPRETATION OF THE PHOTO-VOLTAIC STABILITY
JOUSSE, D
VIKTOROVITCH, P
VIEUXROCHAZ, L
CHENEVASPAULE, A
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 767 - 772
[7] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE
MADAN, A
LECOMBER, PG
SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) : 239 - 257
[8] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS
SOLOMON, I
DIETL, T
KAPLAN, D
[J]. JOURNAL DE PHYSIQUE, 1978, 39 (11): : 1241 - 1246
[9] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI
STAEBLER, DL
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 292 - 294
[10] EFFECT OF ADSORBED GASES ON CONDUCTANCE OF AMORPHOUS FILMS OF SEMICONDUCTING SILICON-HYDROGEN ALLOYS
TANIELIAN, M
FRITZSCHE, H
TSAI, CC
SYMBALISTY, E
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 353 - 356

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