EXCITONIC PHOTOLUMINESCENCE IN A CUALSE2 CHALCOPYRITE SEMICONDUCTOR GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：33

作者：

CHICHIBU, S

MATSUMOTO, S

SHIRAKATA, S

ISOMURA, S

HIGUCHI, H

机构：

[1] EHIME UNIV,FAC ENGN,MATSUYAMA,EHIME 790,JAPAN

[2] BENTEC CORP,TACHIKAWA,TOKYO 190,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 10期

关键词：

D O I：

10.1063/1.355129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Excitonic photoluminescence (PL) in a CuAlSe2 chalcopyrite semiconductor was observed. High-quality CuAlSe2 epilayers were grown by the low-pressure metalorganic chemical-vapor deposition technique. Based on photoreflectance measurements, the PL peak at 2.739 eV was assigned to a free exciton emission. The PL peak at 2.677 eV was tentatively assigned to a bound exciton emission.

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页码：6446 / 6447

页数：2

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