PHOTO-LUMINESCENCE FROM GOLD CENTER IN SILICON

被引：13

作者：

MAZZASCHI, J ^{[1
]}

BRABANT, JC ^{[1
]}

BROUSSEAU, B ^{[1
]}

BARRAU, J ^{[1
]}

BROUSSEAU, M ^{[1
]}

VOILLOT, F ^{[1
]}

BACUVIER, P ^{[1
]}

机构：

[1] THOMSON CSF,SILICON SEMICOND,F-3700 TOURS,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 39卷 / 10期

关键词：

D O I：

10.1016/0038-1098(81)90215-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1091 / 1092

页数：2

共 9 条

[1] OPTICAL-PROPERTIES OF GOLD ACCEPTOR AND DONOR LEVELS IN SILICON [J].

BRAUN, S ;

GRIMMEISS, HG .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2658-2665

[2]

BROTHERTON SD, 1980, PHYS REV LETT, V44, P106

[3] WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS [J].

JAROS, M .

PHYSICAL REVIEW B, 1977, 16 (08) :3694-3706

[4]

LANG DV, 1980, PHYS REV B, V22

[5] STRUCTURAL BONDING OF DEEP LEVEL DEFECTS AND THE NATURE OF AMPHOTERIC CENTERS IN SILICON [J].

LOWTHER, JE .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (19) :3665-3679

[6] PROPERTIES OF AU, PT, PD AND RH LEVELS IN SILICON MEASURED WITH A CONSTANT CAPACITANCE TECHNIQUE [J].

PALS, JA .

SOLID-STATE ELECTRONICS, 1974, 17 (11) :1139-1145

[7] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J].

SAH, CT ;

FORBES, L ;

ROSIER, LI ;

TASCH, AF ;

TOLE, AB .

APPLIED PHYSICS LETTERS, 1969, 15 (05) :145-+

[8] ENTROPY OF IONIZATION AND TEMPERATURE-VARIATION OF IONIZATION LEVELS OF DEFECTS IN SEMICONDUCTORS [J].

VANVECHTEN, JA ;

THURMOND, CD .

PHYSICAL REVIEW B, 1976, 14 (08) :3539-3550

[9] GOLD DONOR STATE IN SILICON - TEMPERATURE-DEPENDENCE OF ENERGY-LEVEL AND CAPTURE CROSS-SECTION [J].

WONG, DC ;

PENCHINA, CM .

PHYSICAL REVIEW B, 1975, 12 (12) :5840-5845

← 1 →