STRUCTURAL BONDING OF DEEP LEVEL DEFECTS AND THE NATURE OF AMPHOTERIC CENTERS IN SILICON

被引：27

作者：

LOWTHER, JE

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 19期

关键词：

D O I：

10.1088/0022-3719/13/19/010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3665 / 3679

页数：15

共 28 条

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