SINGLE-MOLECULE PRECURSOR CHEMISTRY FOR THE DEPOSITION OF CHALCOGENIDE(S OR SE)-CONTAINING COMPOUND SEMICONDUCTORS BY MOCVD AND RELATED METHODS

被引：95

作者：

OBRIEN, P ^{[1
]}

NOMURA, R ^{[1
]}

机构：

[1] OSAKA INST TECHNOL,DEPT CHEM,ASAHI,OSAKA 535,JAPAN

来源：

JOURNAL OF MATERIALS CHEMISTRY | 1995年 / 5卷 / 11期

关键词：

D O I：

10.1039/jm9950501761

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A review of recent development in the deposition of Il-VI and Ill-VI compound semiconductors by MOCVD methods using single-compound precursors is presented. The use of such precursors is placed in the context of the potential technological importance of these materials and relevant aspects of conventional MOCVD.

引用

收藏

页码：1761 / 1773

页数：13

相关论文

共 150 条

[1] SOME COMPLEXES OF NEOPENTYLCADMIUM SPECIES WITH DITHIO-AND DI-SELENOCARBAMATES - THE SYNTHESIS, CHARACTERIZATION AND SINGLE-CRYSTAL X-RAY STRUCTURE OF A MIXED NEOPENTYL/DIETHYLDISELENOCARBAMATE OF CADMIUM - [(CH3)(3)CCH(2)CDSE(2)CNET(2)](2) [J].

ABRAHAMS, I ;

MALIK, A ;

MOTEVALLI, M ;

OBRIEN, P .

JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1994, 465 (1-2) :73-77

[2] PENTAMERIC METHYLZINC TERT-BUTYLSULFIDE [J].

ADAMSON, GW ;

BELL, NA ;

SHEARER, HMM .

ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1982, 38 (FEB) :462-465

[3] GROWTH OF II-VI COMPOUNDS BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION - STRUCTURAL CHARACTERIZATION OF DIMETHYLCADMIUM-N,N,N',N'-TETRAMETHYLETHANE-1,2-DIAMINE BY GAS-PHASE ELECTRON-DIFFRACTION AND ITS USE IN THE GROWTH OF EPITAXIAL LAYERS OF CDS AND CDSE UPON GAAS [J].

ALMOND, MJ ;

BEER, MP ;

HAGEN, K ;

RICE, DA ;

WRIGHT, PJ .

JOURNAL OF MATERIALS CHEMISTRY, 1991, 1 (06) :1065-1070

[4] ELECTRON DEFICIENT COMPOUNDS .8. THE CRYSTAL AND MOLECULAR STRUCTURE OF TRIMETHYLINDIUM [J].

AMMA, EL ;

RUNDLE, RE .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1958, 80 (16) :4141-4145

[5]

ARIF AM, 1988, NEW J CHEM, V12, P553

[6] GROWTH OF II-VI THIN-FILMS FROM SINGLE-SOURCE PRECURSORS BASED ON STERICALLY ENCUMBERED SITEL LIGANDS [J].

ARNOLD, J ;

WALKER, JM ;

YU, KM ;

BONASIA, PJ ;

SELIGSON, AL ;

BOURRET, ED .

JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :647-653

[7]

ARNOLD J, 1992, Patent No. 5157136

[8]

BARRIE P, 1993, INORG CHEM, V18, P3862

[9]

BENAC BI, 1989, J AM CHEM SOC, V111, P498

[10]

BERGER LI, 1993, PROPERTIES SEMIICOND

← 1 2 3 4 5 6 7 8 9 10 →