SINGLE-MOLECULE PRECURSOR CHEMISTRY FOR THE DEPOSITION OF CHALCOGENIDE(S OR SE)-CONTAINING COMPOUND SEMICONDUCTORS BY MOCVD AND RELATED METHODS

被引：95

作者：

OBRIEN, P ^{[1
]}

NOMURA, R ^{[1
]}

机构：

[1] OSAKA INST TECHNOL,DEPT CHEM,ASAHI,OSAKA 535,JAPAN

来源：

JOURNAL OF MATERIALS CHEMISTRY | 1995年 / 5卷 / 11期

关键词：

D O I：

10.1039/jm9950501761

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A review of recent development in the deposition of Il-VI and Ill-VI compound semiconductors by MOCVD methods using single-compound precursors is presented. The use of such precursors is placed in the context of the potential technological importance of these materials and relevant aspects of conventional MOCVD.

引用

页码：1761 / 1773

页数：13

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MALIK MA, 1992, ORGANOMETALLICS, V11, P3436

[92] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .2. II-VI COMPOUNDS [J].