LATTICE DILATATION OF BORON IN SILICON

被引：5

作者：

STONEHAM, AM

机构：

[1] Theoretical Physics Division, AERE, Harwell

来源：

PHYSICS LETTERS A | 1979年 / 70卷 / 01期

关键词：

D O I：

10.1016/0375-9601(79)90326-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Recent data on laser-annealed, boron-implanted silicon are analysed, and the results compared with earlier experiments and simple theory. Each substitutional boron decreases the total volume by about 90% of the volume per silicon atom in the perfect crystal. © 1979.

引用

页码：55 / 56

页数：2

共 9 条

[1]

BUBLIK VT, 1969, FIZ TVERD TELA+, V10, P2247

[2] LATTICE-PARAMETER STUDY OF SILICON UNIFORMLY DOPED WITH BORON AND PHOSPHORUS [J].