DIRECT EVIDENCE FOR THE AMORPHOUS-SILICON PHASE IN VISIBLE PHOTOLUMINESCENT POROUS SILICON

被引：151

作者：

PEREZ, JM ^{[1
]}

VILLALOBOS, J ^{[1
]}

MCNEILL, P ^{[1
]}

PRASAD, J ^{[1
]}

CHEEK, R ^{[1
]}

KELBER, J ^{[1
]}

ESTRERA, JP ^{[1
]}

STEVENS, PD ^{[1
]}

GLOSSER, R ^{[1
]}

机构：

[1] UNIV TEXAS,CTR APPL OPT & PHYS PROGRAMS,RICHARDSON,TX 75083

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.107837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on micro-Raman spectroscopy studies of porous silicon which show an amorphous silicon Raman line at 480 R cm-1 from regions that emit visible photoluminescence. A Raman line corresponding to microcrystalline silicon at 510 R cm-1 is also observed. X-ray photoelectron spectroscopy data is presented which shows a high silicon-dioxide content in porous silicon consistent with an amorphous silicon phase.

引用

页码：563 / 565

页数：3

共 16 条

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