HIGH-RESOLUTION X-RAY TRIPLE AXIS DIFFRACTOMETRY OF SHORT-PERIOD SIMGEN SUPERLATTICES

被引:4
作者
KOPPENSTEINER, E
BAUER, G
HOLY, V
KASPER, E
机构
[1] MASARYK UNIV,CS-61137 BRNO,CZECH REPUBLIC
[2] DAIMLER BENZ AG,RES CTR,W-7900 ULM,GERMANY
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 4B期
关键词
SI/GE SUPERLATTICES; MOLECULAR BEAM EPITAXY; X-RAY DIFFRACTION; STRAIN ANALYSIS; DEFECT STRUCTURE;
D O I
10.1143/JJAP.33.2322
中图分类号
O59 [应用物理学];
学科分类号
摘要
Double crystal and triple axis X-ray reciprocal space mapping were used to characterize in detail the structural properties of short period Si9Ge6 superlattices grown by molecular beam epitaxy (MBE) on 1.3 mum thick step-graded SiGe alloy buffers resulting in reduced dislocation densities. Precise strain data were extracted from two-dimensional reciprocal space maps around (004) and (224) reciprocal lattice points (RELP's). From the distribution of diffusely scattered intensity around reciprocal lattice points the correlation function of the deformation field due to structural defects was calculated using a model based on the kinematical theory of X-ray diffraction and on a formalism from statistical optics. Two types of extreme models were defined f or the defect structure, and from simulations to the correlation function calculated from the diffuse X-ray scattering (DXS) limiting mosaicity parameters were extracted.
引用
收藏
页码:2322 / 2328
页数:7
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