INDIUM-PHOSPHIDE AND QUATERNARY DOPING SUPERLATTICES GROWN BY LIQUID-PHASE EPITAXY

Stacks containing from 20 to 100 alternating n- and p-layers, each less than 100 nm thick, have been produced by liquid-phase epitaxy in both InP and in the quaternary alloy In//1// minus //xGa//xAs//yP//1// minus //y. Increasing the excitation intensity shifts the photoluminescence (PL) towards shorter wavelengths by the expected magnitude. Hetero-nipi quaternary structures displaying two PL peaks have also been grown. The relative intensities of the two peaks depend strongly on the excitation intensity.