TEMPERATURE-DEPENDENT LUMINESCENCE OF GAAS DOPING SUPERLATTICES

被引：9

作者：

KOHLER, K ^{[1
]}

DOHLER, GH ^{[1
]}

MILLER, JN ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 58卷 / 11期

关键词：

DOPED LAYERS - DOPING CONCENTRATIONS - PHOTON ENERGY - SUPERLATTICES - TUNABLE LUMINESCENCE;

D O I：

10.1016/0038-1098(86)90765-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：769 / 773

页数：5

共 15 条

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[9] THE USE OF SI AND BE IMPURITIES FOR NOVEL PERIODIC DOPING STRUCTURES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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