ASYMMETRICAL RELAXATION OF SIMPLE E' CENTERS IN SILICON DIOXIDE ISOMORPHS

被引：23

作者：

EDWARDS, AH

FOWLER, WB

FEIGL, FJ

机构：

[1] LEHIGH UNIV,DEPT PHYS,BETHLEHEM,PA 18015

[2] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.37.9000

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9000 / 9005

页数：6

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