SEMIEMPIRICAL MOLECULAR-ORBITAL TECHNIQUES APPLIED TO SILICON DIOXIDE - MINDO/3

被引:52
作者
EDWARDS, AH
FOWLER, WB
机构
[1] LEHIGH UNIV,DEPT PHYS,BETHLEHEM,PA 18015
[2] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015
关键词
DIELECTRIC MATERIALS;
D O I
10.1016/0022-3697(85)90009-5
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The authors present a discussion of MINDO/3, a semiempirical molecular orbital program, which the authors have applied to clusters of atoms used to represent silicon dioxide. They have obtained MINDO/3 parameters for the Si-O interaction and have calculated a variety of observables for both molecules and solid-state clusters, for both open- and closed-shell systems. With some exceptions, good agreement is found with other calculations and with experiment. In particular, the results for both E//1** prime and E//4** prime defects support existing models which feature asymmetric atomic relaxations.
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页码:841 / 857
页数:17
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