LOW-TEMPERATURE (10-K) PHOTOLUMINESCENCE OF GA1-XINXPYAS1-Y QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：7

作者：

LUDOWISE, MJ ^{[1
]}

BISWAS, D ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.102591

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ga1-x Inx As1-y Py /InP (x=0.72, y=0.39) lattice-matched quantum wells (QWs) are grown by low-pressure metalorganic chemical vapor deposition on (100) and 3°misoriented substrates, using different variations of growth technique. Low-temperature (10 K) photoluminescence is used to characterize the QWs. We find that substrates oriented closely to (100) (no intentional misorientation) produce QWs of consistently higher quality as judged by the width of the n=1 photoluminescence peak. The use of growth interruptions at the well interfaces severely degrades the QW quality. The narrowest peak observed is 5.8 meV wide from a 70-Å-wide well.

引用

页码：958 / 960

页数：3

共 13 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8775-8792

[2]

BHAT BJ, 1989, 31ST EL MAT C BOST

[3] CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL ALXGA1-XAS-GAAS INJECTION-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD ;

HOLONYAK, N ;

KOLBAS, RM .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :487-489

[4] SHARP INTERFACES IN GAINASP-INP SINGLE QUANTUM WELLS GROWN BY MOVPE [J].

IRIKAWA, M ;

MURGATROYD, IJ ;

IJICHI, T ;

MATSUMOTO, N ;

NAKAI, A ;

KASHIWA, S .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :370-375

[5] 1.5-MU-M GAINAS/GAINASP GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE MULTIPLE QUANTUM WELL (GRIN-SCH-MQW) LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD) [J].

KASUKAWA, A ;

MURGATROYD, IJ ;

IMAJO, Y ;

NAMEGAYA, T ;

OKAMOTO, H ;

KASHIWA, S .

ELECTRONICS LETTERS, 1989, 25 (10) :659-661

[6] HIGH-QUALITY INGAASP/INP SINGLE-QUANTUM WELLS AND SUPERLATTICE STRUCTURES GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY [J].

KONDO, M ;

YAMAZAKI, S ;

SUGAWARA, M ;

OKUDA, H ;

KATO, K ;

NAKAJIMA, K .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :376-381

[7] THE QUANTUM WELL SELF-ELECTROOPTIC EFFECT DEVICE - OPTOELECTRONIC BISTABILITY AND OSCILLATION, AND SELF-LINEARIZED MODULATION [J].

MILLER, DAB ;

CHEMLA, DS ;

DAMEN, TC ;

WOOD, TH ;

BURRUS, CA ;

GOSSARD, AC ;

WIEGMANN, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (09) :1462-1476

[8] ALLOY BROADENING IN PHOTOLUMINESCENCE SPECTRA OF ALXGA1-XAS [J].

SCHUBERT, EF ;

GOBEL, EO ;

HORIKOSHI, Y ;

PLOOG, K ;

QUEISSER, HJ .

PHYSICAL REVIEW B, 1984, 30 (02) :813-820

[9] OPTICAL-PROPERTIES OF INGAAS-INP SINGLE QUANTUM-WELLS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SKOLNICK, MS ;

TAPSTER, PR ;

BASS, SJ ;

APSLEY, N ;

PITT, AD ;

CHEW, NG ;

CULLIS, AG ;

ALDRED, SP ;

WARWICK, CA .

APPLIED PHYSICS LETTERS, 1986, 48 (21) :1455-1457

[10] ROOM-TEMPERATURE EXCITON OPTICAL-ABSORPTION PEAKS IN INGAASP/INP MULTIPLE QUANTUM WELLS [J].

SUGAWARA, M ;

FUJII, T ;

YAMAZAKI, S ;

NAKAJIMA, K .

APPLIED PHYSICS LETTERS, 1989, 54 (14) :1353-1355

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