1.5-MU-M GAINAS/GAINASP GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE MULTIPLE QUANTUM WELL (GRIN-SCH-MQW) LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD)

被引：15

作者：

KASUKAWA, A

MURGATROYD, IJ

IMAJO, Y

NAMEGAYA, T

OKAMOTO, H

KASHIWA, S

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 10期

关键词：

D O I：

10.1049/el:19890446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：659 / 661

页数：3

相关论文

共 7 条

[1] GAIN AND INTERVALENCE BAND ABSORPTION IN QUANTUM-WELL LASERS
ASADA, M
KAMEYAMA, A
SUEMATSU, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (07) : 745 - 753
[2] KAKIBAYASHI H, 1986, 11TH P INT C EL MICR, P1495
[3] LOW INTERNAL LOSS SEPARATE CONFINEMENT HETEROSTRUCTURE INGAAS INGAASP QUANTUM-WELL LASER
KOREN, U
MILLER, BI
SU, YK
KOCH, TL
BOWERS, JE
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (21) : 1744 - 1746
[4] OHSHIBA S, 1987, IEEE J QUANTUM ELECT, V23, P738
[5] IMPROVEMENTS IN RESONANCE FREQUENCY AND T0 VALUE BY 1.5-MU-M INGAAS MQW LASERS GROWN BY MOVPE
TAKANO, S
SASAKI, T
YAMADA, H
KITAMURA, M
MITO, I
SUZUKI, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 857 - 862
[6] A GRADED-INDEX WAVE-GUIDE SEPARATE-CONFINEMENT LASER WITH VERY LOW THRESHOLD AND A NARROW GAUSSIAN-BEAM
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (02) : 134 - 137
[7] CHEMICAL BEAM EPITAXIAL-GROWTH OF VERY LOW THRESHOLD GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE AND MULTIQUANTUM WELL LASERS
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1010 - 1012