IMPROVEMENTS IN RESONANCE FREQUENCY AND T0 VALUE BY 1.5-MU-M INGAAS MQW LASERS GROWN BY MOVPE

被引：8

作者：

TAKANO, S

SASAKI, T

YAMADA, H

KITAMURA, M

MITO, I

SUZUKI, T

机构：

[1] NEC, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

Crystals--Epitaxial Growth - Microscopic Examination--Transmission Electron Microscopy - Semiconducting Indium Compounds--Growth;

D O I：

10.1016/0022-0248(88)90631-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High quality InGaAs/InP quantum well structures and 1.5 μm MQW lasers, grown by low pressure MOVPE, are reported. PL linewidth, PL peak energy shift, X-ray satellite peaks and transmission spectroscopy have demonstrated that the InGaAs/InP quantum wells were of high quality. The first improvements in T0 and resonance frequency in 1.5 μm MQW lasers are reported. Superior performances due to a quantum effect are: (1) high T0 value, 105 K (15-45°C), (2) large TE/TM mode gain difference, 45 cm-1, and (3) high resonance frequency, 4 GHz/mW 1/2 .

引用

页码：857 / 862

页数：6

共 18 条

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