FABRICATION AND PERFORMANCE-CHARACTERISTICS OF INGAASP MULTIQUANTUM WELL DOUBLE CHANNEL PLANAR BURIED HETEROSTRUCTURE LASERS

被引：21

作者：

DUTTA, NK

NAPHOLTZ, SG

YEN, R

BROWN, RL

SHEN, TM

OLSSON, NA

CRAFT, DC

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 01期

关键词：

D O I：

10.1063/1.95835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

LASERS, SEMICONDUCTOR

引用

收藏

页码：19 / 21

页数：3

相关论文

共 24 条

[1] LINEWIDTH ENHANCEMENT FACTOR FOR QUANTUM-WELL LASERS
BURT, MG
[J]. ELECTRONICS LETTERS, 1984, 20 (01) : 27 - 29
[2] AUGER RECOMBINATION IN QUANTUM-WELL INGAASP HETEROSTRUCTURE LASERS
CHIU, LC
YARIV, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) : 1406 - 1409
[3] GAIN AND CARRIER LIFETIME MEASUREMENTS IN ALGAAS MULTIQUANTUM WELL LASERS
DUTTA, NK
HARTMAN, RL
TSANG, WT
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (11) : 1613 - 1616
[4] CARRIER INDUCED REFRACTIVE-INDEX CHANGE IN ALGAAS QUANTUM WELL LASERS
DUTTA, NK
OLSSON, NA
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (08) : 836 - 837
[5] CALCULATED THRESHOLD CURRENT OF GAAS QUANTUM WELL LASERS
DUTTA, NK
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7211 - 7214
[6] CALCULATION OF AUGER RATES IN A QUANTUM WELL STRUCTURE AND ITS APPLICATION TO INGAASP QUANTUM WELL LASERS
DUTTA, NK
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1236 - 1245
[7] DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380
[8] THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y
DUTTA, NK
NELSON, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 74 - 92
[9] HARSEE SD, 1982, ELECTRON LETT, V18, P1095
[10] QUANTUM-WELL HETEROSTRUCTURE LASERS
HOLONYAK, N
KOLBAS, RM
DUPUIS, RD
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186