GAIN AND CARRIER LIFETIME MEASUREMENTS IN ALGAAS MULTIQUANTUM WELL LASERS

[1] MEASUREMENT OF MINORITY-CARRIER LIFETIME DURING GRADUAL DEGRADATION OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1974, QE10 (01) : 81 - 84

[2] DINGLE R, 1976, Patent No. 3982207

[3] GENERALIZED EXPRESSIONS FOR THE TURN-ON DELAY IN SEMICONDUCTOR-LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4591 - 4595

[4] (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS - COMPARISON OF DEVICES FABRICATED WITH DEEP AND SHALLOW PROTON-BOMBARDMENT [J]. BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (06): : 975 - 985

[5] CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL ALXGA1-XAS-GAAS INJECTION-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 487 - 489

[6] GAIN AND CARRIER LIFETIME MEASUREMENTS IN ALGAAS SINGLE QUANTUM WELL LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) : 1243 - 1246

[7] CALCULATED THRESHOLD CURRENT OF GAAS QUANTUM WELL LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7211 - 7214

[8] CALCULATION OF AUGER RATES IN A QUANTUM WELL STRUCTURE AND ITS APPLICATION TO INGAASP QUANTUM WELL LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1236 - 1245

[9] DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380

[10] GAIN MEASUREMENTS IN 1.3-MUM INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (01) : 44 - 49

[1] MEASUREMENT OF MINORITY-CARRIER LIFETIME DURING GRADUAL DEGRADATION OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1974, QE10 (01) : 81 - 84

[2] DINGLE R, 1976, Patent No. 3982207

[3] GENERALIZED EXPRESSIONS FOR THE TURN-ON DELAY IN SEMICONDUCTOR-LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4591 - 4595

[4] (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS - COMPARISON OF DEVICES FABRICATED WITH DEEP AND SHALLOW PROTON-BOMBARDMENT [J]. BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (06): : 975 - 985

[5] CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL ALXGA1-XAS-GAAS INJECTION-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 487 - 489

[6] GAIN AND CARRIER LIFETIME MEASUREMENTS IN ALGAAS SINGLE QUANTUM WELL LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) : 1243 - 1246

[7] CALCULATED THRESHOLD CURRENT OF GAAS QUANTUM WELL LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7211 - 7214

[8] CALCULATION OF AUGER RATES IN A QUANTUM WELL STRUCTURE AND ITS APPLICATION TO INGAASP QUANTUM WELL LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1236 - 1245

[9] DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380

[10] GAIN MEASUREMENTS IN 1.3-MUM INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (01) : 44 - 49