CARRIER INDUCED REFRACTIVE-INDEX CHANGE IN ALGAAS QUANTUM WELL LASERS

被引:35
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DUTTA, NK
OLSSON, NA
TSANG, WT
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10.1063/1.95418
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O59 [应用物理学];
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页码:836 / 837
页数:2
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共 19 条
[1]  
CASEY HC, 1978, HETEROSTRUCTURE LA B, P52
[2]   (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS - COMPARISON OF DEVICES FABRICATED WITH DEEP AND SHALLOW PROTON-BOMBARDMENT [J].
DIXON, RW ;
JOYCE, WB .
BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (06) :975-985
[3]   GAIN AND CARRIER LIFETIME MEASUREMENTS IN ALGAAS SINGLE QUANTUM WELL LASERS [J].
DUTTA, NK ;
HARTMAN, RL ;
TSANG, WT .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) :1243-1246
[4]  
DUTTA NK, 1984, J APPL PHYS, V56
[5]   SPECTRAL DEPENDENCE OF THE CHANGE IN REFRACTIVE-INDEX DUE TO CARRIER INJECTION IN GAAS-LASERS [J].
HENRY, CH ;
LOGAN, RA ;
BERTNESS, KA .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4457-4461
[6]   QUANTUM-WELL HETEROSTRUCTURE LASERS [J].
HOLONYAK, N ;
KOLBAS, RM ;
DUPUIS, RD ;
DAPKUS, PD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186
[7]   CARRIER DENSITY DEPENDENCE OF REFRACTIVE-INDEX IN ALGAAS SEMICONDUCTOR-LASERS [J].
ITO, M ;
KIMURA, T .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (09) :910-911
[8]   WAVELENGTH VARIATION OF 1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP INP LASERS DUE TO DIRECT MODULATION [J].
KISHINO, K ;
AOKI, S ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (03) :343-351
[9]   DELAY BETWEEN CURRENT PULSE + LIGHT EMISSION OF GALLIUM ARSENIDE INJECTION LASER ( RISE-TIME LESS THAN 0.2 NSEC 77 DEGREES K E ) [J].
KONNERTH, K ;
LANZA, C .
APPLIED PHYSICS LETTERS, 1964, 4 (07) :120-&
[10]   THE CARRIER-INDUCED INDEX CHANGE IN ALGAAS AND 1.3 MU-M INGAASP DIODE-LASERS [J].
MANNING, J ;
OLSHANSKY, R ;
SU, CB .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (10) :1525-1530