TRANSPORT THROUGH ONE-DIMENSIONAL CHANNELS

被引：14

作者：

DEAGUIAR, FM

WHARAM, DA

机构：

[1] Sektion Physik, Universität M̈nchen, D-8000 M̈nchen 22

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.43.9984

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The oscillatory behavior in the conductance of narrow channels in semiconductor heterostructures interrupted by a finite number of potential barriers can be explained by resonant tunneling of noninteracting electrons in a single one-dimensional subband. A simple and powerful method based on a generalized wave-impedance concept is used to calculate the transmission coefficient for electrons passing through such devices. The results show intriguing similarities with recent experiments.

引用

收藏

页码：9984 / 9987

页数：4

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