CHEMICALLY PREPARED OXIDES ON SI(001) - AN XPS STUDY

被引：31

作者：

PRABHAKARAN, K

KOBAYASHI, Y

OGINO, T

机构：

[1] NTT Basic Research Laboratories, Musashino-shi, Tokyo, 180

来源：

SURFACE SCIENCE | 1993年 / 290卷 / 03期

关键词：

D O I：

10.1016/0039-6028(93)90707-Q

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin oxide. layers prepared on Si(001) by various chemical treatments have been investigated using X-ray photoelectron spectroscopy. The oxides are prepared by treatment with HCl, H2SO4 and HNO3. The O 1s spectra consists of two peaks at 532.6 eV (low binding energy component, LBC) and 533.6 eV (high binding energy component, HBC) in all the cases. The LBC is assigned to a monatomic bridging oxygen, Si-O-Si and HBC to a monatomic non-bridging oxygen, Si-O species. Conversion of Si-O to Si-O-Si takes place on annealing the sample. The concentration of Si-O species is low in the case of HCI oxide. In in situ prepared oxide, the O 1s is predominantly due to Si-O-Si.

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页码：239 / 244

页数：6

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