A NEW EMPIRICAL NONLINEAR MODEL FOR HEMT AND MESFET DEVICES

A new large signal model for HEMT's and MESFET's, capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak, gate-source and gate-drain capacitances is described. Model parameter extraction is straightforward and is demonstrated for different submicron gate-length HEMT devices including different partial derivative-doped pseudomorphic HEMTs on GaAs and lattice matched to InP, and a commercially available MESFET. Measured and modeled dc and S-parameters are compared and found to coincide well.