ASSESSMENT OF DEFECTS IN AS-GROWN III-V MULTILAYER STRUCTURES BY DIFFERENTIATED CATHODOLUMINESCENCE TOPOGRAPHY (DCLT)

被引：2

作者：

BAKKER, J

DEPOORTER, J

BARTELS, WJ

DONGEN, TV

NIJMAN, W

STACY, WT

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 02期

关键词：

D O I：

10.1007/BF02670852

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：311 / 334

页数：24

相关论文

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