ASYMMETRY OF MISFIT DISLOCATIONS IN HETEROEPITAXIAL LAYERS ON (001) GAAS SUBSTRATES

被引：41

作者：

BARTELS, WJ ^{[1
]}

NIJMAN, W ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 37卷 / 03期

关键词：

D O I：

10.1016/0022-0248(77)90115-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：204 / 214

页数：11

相关论文

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