CONDUCTIVITY AND HALL-EFFECT OF HEAVILY DOPED SEMICONDUCTORS AT LOW-TEMPERATURES IN A WEAK MAGNETIC-FIELD

被引：11

作者：

VANCONG, H

MESNARD, G

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1972年 / 49卷 / 01期

关键词：

D O I：

10.1002/pssb.2220490117

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：179 / &

共 20 条

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