CALCULATED BAND-GAPS AND EXCITED-STATES IN SEMICONDUCTORS

被引：5

作者：

DAHR, AIA

LEE, PM

机构：

[1] Univ of Lancaster, Lancaster, Engl, Univ of Lancaster, Lancaster, Engl

来源：

PHYSICA SCRIPTA | 1988年 / 38卷 / 03期

关键词：

BAND STRUCTURE - ELECTRONS - SEMICONDUCTING CADMIUM COMPOUNDS - Structure;

D O I：

10.1088/0031-8949/38/3/018

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A method of treating the screening by valence electrons in a semiconductor which takes account of the lower and more uniform charge density in the regions between atoms is applied to silicon and cadmium sulphide. Improved values of the band gap are obtained and these results along with the densities of states and energy bands in the region of the gap are discussed.

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页码：441 / 443

页数：3

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